3Amp Super Fast Recovery Silicon Rectifier Diode Voltage Range 50-600V ES3A-ES3J SMC DO-214AB
FEATURES
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Super Fast Recovery Times For High Effieciency
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| MCC Part Number | Device Marking | Maximum Recurrent Peak Reverse Voltage | Maximum RMS Voltage | Maximum DC Blocking Voltage |
| ES3A | ES3A | 50V | 35V | 50V |
| ES3B | ES3B | 100V | 70V | 100V |
| ES3C | ES3C | 150V | 105V | 150V |
| ES3D | ES3D | 200V | 140V | 200V |
| ES3G | ES3G | 400V | 280V | 400V |
| ES3J | ES3J | 600V | 420V | 600V |
| ES3K | ES3K | 800V | 560V | 800V |
| ES3M | ES3M | 1000V | 700V | 1000V |
| Average Forward Current | I F(AV) | 3.0A | T a = 75C |
| Peak Forward Surge Current | I FSM | 100A | 8.3ms, half sine |
| Maximum Instantaneous Forward Voltage ES3A-D ES3G-J ES3K~M | V F | .975V 1.35V 1.70V | I FM = 3.0A; T J = 25°C |
| Maximum DC Reverse Current At Rated DC Blocking Voltage | I R | 5uA 200uA | T J = 25C T J = 100C |
| Maximum Reverse Recovery Time | T rr | 35ns | I F =0.5A, I R =1.0A, I rr =0.25A |
| Typical Junction Capacitance | C J | 45pF | Measured at 1.0MHz, V R =4.0V |
Size:
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3Amp Super Fast Recovery Silicon Rectifier Diode Voltage Range 50-600V ES3A-ES3J SMC DO-214AB Images
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